c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf w w w w 20n60w 20n60w 20n60w 20n60w rev.a mar .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 20 a, 6 00v,r ds(on) (max 0.39 ? )@v gs =10v ? ultra-low gate charge(typical 150 nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advancedplanar stripe,vdmos technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially wellsuited for ac-dc switching power supplies, dc-dc powerconverters high voltage h-bridge motor drive pwm absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 20 a continuous drain current(@tc=100 ) 15 a i dm drain current pulsed (note1) 80 a v gs gate to source voltage 30 v e ar repetitive avalanche energy (note1) 30 mj dv/dt peak diode recovery dv /dt (note3) 5.0 v/ ns p d total power dissipation(@tc=25 ) 300 w t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.25 /w
wf wf wf wf w w w w 20 20 20 20 n n n n 60w 60w 60w 60w 2 / 3 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 200 a v gs =0v,t j =125 - - 1000 a drain -source breakdown voltage v (br)dss i d = 250 a ,v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =v gs , i d = 4 m a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 10 a - - 0.39 ? forward transconductance gfs v ds 10 v,i d = 10 a 11 1 8 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 4500 pf reverse transfer capacitance c rss - 140 output capacitance c oss - 420 switching time rise time tr v gs =10v v d s = 300 v, i d = 10 a r g = 2 .00 ? - 45 60 ns turn-on time ton - 20 40 fall time tf - 40 60 turn-off time toff - 70 90 total gate charge(gate-source plus gate-drain) qg v d s = 3 00 v, v gs =10v, i d = 10 a - 150 170 nc gate-source charge qgs - 30 40 gate-drain("miller") charge qgd - 60 85 source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 20 a forward voltage(diode) v dsf i dr = i s a,v gs =0v - - 1.5 v reverse recovery time trr i dr = 1 0 a,v gs =0v, di dr / dt =100 a / s - 250 ns reverse recovery charge qrr - 1 - c note 1.pulse test:pulse width 300us,duty cycle 2% 2 . essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
wf wf wf wf w w w w 20 20 20 20 n n n n 60w 60w 60w 60w 3 / 3 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to- to- to- to- 2 2 2 2 47 47 47 47 package package package package dimension dimension dimension dimension unit:mm
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